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| MJE13007A SILICON NPN SWITCHING TRANSISTOR s s s SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY APPLICATIONS SWITCHING REGULATORS s MOTOR CONTROL s DESCRIPTION The MJE13007A is silicon multiepitaxial mesa NPN power transistor mounted in Jedec TO-220 plastic package. They are inteded for use in motor control, switching regulators etc. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM IE I EM P tot T stg Tj June 1997 Parameter Collector-Emitter Voltage (V BE = -1.5V) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Emitter Current Emitter Peak Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 850 400 9 8 16 4 8 12 24 80 -65 to 150 150 Unit V V V A A A A A A W o o C C 1/4 MJE13007A THERMAL DATA R thj-case Thermal Resistance Junction-case Max 1.56 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CEV I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEV V CE = rated V CEV V EB = 9 V I C = 10 mA IC IC IC IC = = = = 2 5 8 5 A A A A IB IB IB IB = = = = 0.4 A 1A 2A 1A 400 1 1.5 3 2 1.2 1.6 1.5 8 6 f = 1 MHz f = 0.1 MHz 4 110 40 30 MHz pF T c = 100 C o Min. Typ. Max. 1 5 1 Unit mA mA mA V V V V V V V V V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) Collector-Emitter Saturation Voltage T c = 100 o C V BE(sat) Base-Emitter Saturation Voltage DC Current Gain Transition Frequency Output Capacitance IC = 2 A IC = 5 A IC = 5 A IC = 2 A IC = 5 A I C = 0.5 A IE = 0 I B = 0.4 A IB = 1 A IB = 1 A V CE = 5 V V CE = 5 V V CE = 10 V V CB = 10 V T c = 100 o C h FE fT C CBO RESISTIVE LOAD Symbol t on ts tf Parameter Turn-on Time Storage Time Fall Time Test Conditions V CC = 125 V I C = 5 A I B1 = -I B2 = 1 A t p = 25 s Duty Cycle < 1% Min. Typ. Max. 0.7 3 0.7 Unit s s s INDUCTIVE LOAD Symbol tf tf Parameter Fall Time Fall Time Test Conditions V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 s Duty Cycle < 1% V CC = 125 V IC = 5 A I B1 = 1 A t p = 25 s Duty Cycle < 1% T c = 100 o C Min. Typ. Max. 0.3 0.6 Unit s s * Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/4 MJE13007A TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 A C D1 L2 F1 D G1 E Dia. L5 L7 L6 L4 P011C L9 F2 F G H2 3/4 MJE13007A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... 4/4 |
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